 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| v02.1203 MICROWAVE CORPORATION HMC232 Features High Isolation: >50 dB @ 10 GHz Low Insertion Loss: 1.4 dB @ 6 GHz Non-Reflective Design Die Size: 1.04 mm x 2.05 mm x 0.1 mm Direct Replacement for HMC132 GaAs MMIC SPDT NON-REFLECTIVE SWITCH, DC - 15.0 GHz Typical Applications Broadband switch for DC - 15 GHz applications: * Fiber Optics * Microwave Radio * Military & Space * Test Equipment * VSAT Functional Diagram General Description The HMC232 is a broadband non-reflective GaAs MESFET SPDT MMIC chip. Covering DC to 15 GHz, the switch features over 55 dB isolation at lower frequencies and over 45 dB at higher frequencies due to the implementation of on-chip via hole structures. The switch operates using two negative control voltage logic lines (A&B) of -5/0V and requires no Vee. Alternate A & B control pads are provided to ease MIC implementation. All data shown is tested with the chip in a 50 Ohm test fixture connected via 0.025 mm (1 mil) diameter wire bonds of 0.5 mm (20 mils) length. This product is a form, fit & functional replacement for the HMC132. 7 SWITCHES - CHIP Electrical Specifications, TA = +25 C, With 0/-5V Control, 50 Ohm System Parameter Frequency DC - 6 GHz DC - 10 GHz DC - 15 GHz DC - 6 GHz DC - 10 GHz DC - 15 GHz "On State" DC - 6 GHz DC - 15 GHz DC - 6 GHz DC - 15 GHz 0.5 - 15 GHz 0.5 - 15 GHz 21 44 50 45 40 Min. Typ. 1.4 2.2 3.1 55 50 45 18 12 14 13 26 49 Max. 1.7 2.5 3.4 Units dB db dB dB dB dB dB dB dB dB dBm dBm Insertion Loss Isolation Return Loss Return Loss RF1, RF2 Input Power for 1 dB Compression "Off State" Input Third Order Intercept (Two-Tone Input Power= +7 dBm Each Tone, 1 MHz Tone Separation) Switching Characteristics tRISE, tFALL (10/90% RF) tON, tOFF (50% CTL to 10/90% RF) DC - 15 GHz 3 5 ns ns 7-2 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order Online at www.hittite.com MICROWAVE CORPORATION v02.1203 HMC232 GaAs MMIC SPDT NON-REFLECTIVE SWITCH, DC - 15.0 GHz Insertion Loss vs. Temperature 0 -1 INSERTION LOSS (dB) -20 -2 -3 -4 -5 -80 -6 0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 FREQUENCY (GHz) -90 0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 FREQUENCY (GHz) ISOLATION (dB) -30 -40 -50 -60 -70 RF1 RF2 Isolation 0 -10 +25 C +85 C -55 C Return Loss 0 RFC RF1, RF2 ON RF1, RF2 OFF 0.1 and 1 dB Input Compression Point 30 -5 RETURN LOSS (dB) 7 0.1 dB Compression Point 1 dB Compression Point 25 INPUT P1dB (dBm) -10 20 -15 15 -20 -25 0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 FREQUENCY (GHz) 10 0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 FREQUENCY (GHz) Input Third Order Intercept Point 60 55 INPUT IP3 (dBm) 50 45 40 35 30 0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 FREQUENCY (GHz) +25 C +85 C -55 C For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order Online at www.hittite.com 7-3 SWITCHES - CHIP MICROWAVE CORPORATION v02.1203 HMC232 GaAs MMIC SPDT NON-REFLECTIVE SWITCH, DC - 15.0 GHz Absolute Maximum Ratings RF Input Power (Vctl = -5V) (0.5 - 15 GHz) Control Voltage Range (A & B) Channel Temperature Thermal Resistance Storage Temperature Operating Temperature +30 dBm (@ +50 C) +1.0V to -7.5 Vdc High 150 C 92 C/W -65 to +150 C -55 to +85 C Control Input A High Low B Low High Signal Path State RFC to RF1 ON OFF RFC to RF2 OFF ON -5V @ 10 uA Typ. to -7V @ 45 uA Typ. Control Voltages State Low Bias Condition 0 to -0.2V @ 10 uA Max. Truth Table Caution: Do not "Hot Switch" power levels greater than +26 dBm (Vctl = 0/-5 Vdc). 7 SWITCHES - CHIP Outline Drawing NOTES: 1. ALL DIMENSIONS IN INCHES [MILLIMETERS] 2. BOND PADS ARE 0.004" SQUARE 3. TYPICAL BOND PAD SPACING CENTER TO CENTER IS .006" 4. BACKSIDE METALIZATION: GOLD 5. BOND PAD METALIZATION: GOLD 6. BACKSIDE OF DIE IS GROUND 7. DIE THICKNESS IS .004" 8. NO CONNECTION REQUIRED FOR UNLABLED BOND PADS 7-4 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order Online at www.hittite.com MICROWAVE CORPORATION v02.1203 HMC232 GaAs MMIC SPDT NON-REFLECTIVE SWITCH, DC - 15.0 GHz Suggested Driver Circuit Pad Descriptions Pad Number Function Description Interface Schematic 7 See truth table and control voltage table. Alternate A & B control pads provided. 2, 5, 8, 10 A 3, 6, 9 B See truth table and control voltage table. Alternate A & B control pads provided. 1, 4, 7 RF1, RFC, RF2 This pad is DC coupled and matched to 50 Ohms. Blocking capacitors are required if the RF line potential is not equal to 0V. GND Die bottom must be connected to RF ground. For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order Online at www.hittite.com 7-5 SWITCHES - CHIP MICROWAVE CORPORATION v02.1203 HMC232 GaAs MMIC SPDT NON-REFLECTIVE SWITCH, DC - 15.0 GHz Assembly Diagram 7 Mounting & Bonding Techniques for Microwave GaAs MMICs SWITCHES - CHIP The die should be attached directly to the ground plane with conductive epoxy (see HMC general Handling, Mounting, Bonding Note). 50 Ohm Microstrip transmission lines on 0.127mm (5 mil) thick alumina thin film substrates are recommended for bringing RF to and from the chip (Figure 1). If 0.254mm (10 mil) thick alumina thin film substrates must be used, the die should be raised 0.150mm (6 mils) so that the surface of the die is coplanar with the surface of the substrate. One way to accomplish this is to attach the 0.102mm (4 mil) thick die to a 0.150mm (6 mil) thick molybdenum heat spreader (moly-tab) which is then attached to the ground plane (Figure 2). Microstrip substrates should brought as close to the die as possible in order to minimize bond wire length. Typical dieto-substrate spacing is 0.152 mm (6 mils). 7-6 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order Online at www.hittite.com MICROWAVE CORPORATION v02.1203 HMC232 GaAs MMIC SPDT NON-REFLECTIVE SWITCH, DC - 15.0 GHz Handling Precautions Follow these precautions to avoid permanent damage. Cleanliness: Handle the chips in a clean environment. DO NOT attempt to clean the chip using liquid cleaning systems. Static Sensitivity: Follow ESD precautions to protect against > 250V ESD strikes. Transients: Suppress instrument and bias supply transients while bias is applied. Use shielded signal and bias cables to minimize inductive pick-up. General Handling: Handle the chip along the edges with a vacuum collet or with a sharp pair of bent tweezers. The surface of the chip has fragile air bridges and should not be touched with vacuum collet, tweezers, or fingers. Mounting The chip is back-metallized and can be die mounted with electrically conductive epoxy. The mounting surface should be clean and flat. Apply a minimum amount of epoxy to the mounting surface so that a thin epoxy fillet is observed around the perimeter of the chip once it is placed into position. Cure epoxy per the manufacturer's schedule. 7 SWITCHES - CHIP 7-7 Wire Bonding Ball or wedge bond with 0.025 mm (1 mil) diameter pure gold wire. Thermosonic wirebonding with a nominal stage temperature of 150 deg. C and a ball bonding force of 40 to 50 grams or wedge bonding force of 18 to 22 grams is recommended. Use the minimum level of ultrasonic energy to achieve reliable wirebonds. Wirebonds should be started on the chip and terminated on the package or substrate. All bonds should be as short as possible <0.31 mm (12 mils). For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order Online at www.hittite.com |
Price & Availability of HMC232
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |